06-04-2011, 12:49 PM
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NANOTECHNOLOGY IN MEMORY DEVICES
ABSTRACT:
Nanotechnology deals with the study of nano sized particles. With the study of nano size particles, devices and composites, we will find ways to make stronger materials, detect diseases in the bloodstream, build extremely tiny machines, generate light and energy and purify water. The most fascinating application of Nanotechnology is that to make Nano\ sized switches to store information. The memory needs of the contemporary world have increased dramatically. Fulfilling these needs, a constant work to improve the capacities of today’s memory devices is in progress. The maximum available semiconductor RAM in common use is of 1GB. Even this could not fill the growing memory desire of today’s users. As a result a nonvolatile, fast and vast RAM has been built with the combination of semiconductor and nanotechnology, named as NRAM (Nano RAM). The main objective of this paper is to show how NANOTECHNOLOGY comfortably mingles with the existing semiconductor technology to from a sup erior RAM, which is nonvolatile, vast and economical, both, in price and power consumption . An effort, to explain why and how the Nano—RAM’s are superior to the existing forms of RAM devices, is made in the introductory part. This paper also includes the design and description of the Nano RAM, followed by its advantages and disadvantages. As the CARBON NANOTUBE forms the heart of these devices , a short notes is also added to introduce the CARBON NANOTUBE’s. Efforts are also made to include a small comparison between the Nano RAM and other possible RAM technologies which claim themselves “Universal” as that of Nano—RAM.
INTRODUCTION:
Today the world is of digital. All the electronic devices are formalized to manipulate the digital data. The back -bone of today’s research and development “The Computer” is also a digital device. Digital by name deals with digits and all the gadgets available today (like PDA’s, laptops, etc…) need to manipulate the digital data. To manipulate first we have to store it at a place. Thus MEMORY in t oday’s world plays a key role and a constant research to improve the memory in today ’s electronic gadgets is ON. RAM (random access memory) is the main storage device in all digital systems. The speed of the system mainly depends on how speed and vast the RAM is. Today with increasing power need of man even the POWER consumed is also a major part to look at. By generations RAM also had under gone many changes. Some of the versions of RAM’s which are in use are DRAM, SRAM and FLASH MEMORY. DRAM (dynamic RAM) although has a capability to hold large amounts of data it is slower and volatile. SRAM (static RAM) even superior to DRAM in speed but less denser . Even this is volatile in nature. Over coming the volatile nature of these two FLASH MEMORY is the latest of today random access memories. Even this fails in power saving. Overcoming all these failures of above mentioned RAM’s , researchers developed a new RAM which unlike the semiconductor technology alone used by the former, uses a combination of NANOTECHNOLOGY and contemporary SEMICONDUCTOR TECHNOLOGY and is given the name NRAM.
THE INCREDIBLE SHRINKING NANOTUBE MEMORY:
Nano-RAM, is a proprietary computer memory technology from the company Nantero. It is a type of nonvolatile random access memory bas ed on the mechanical position of carbon nanotubes deposited on a chip -like substrate. In theory the small size of the nanotubes allows for very high density memories. Na ntero also refers to it as NRAM in short, but this acronym is also commonly used as a s ynonym for the morecommon NVRAM (nonvolatile random access memory), which refers to all nonvolatile RAM
memories. The active element used in this is a CARBON NANOTUBE.
CARBON NANOTUBE:
Carbon nanotubes are cylinders, measuring a nanometer or so in diamet er, that display a surface of hexagonal carbon rings that give the material the appearance of a honeycomb or chicken wire. The chemical bonds between carbon atoms in nanotubes are stronger than in diamond. Carbon nanotubes are 50 times stronger than steel, yet five times less dense. These are highly elastic and resilient to heat, and have large surface area. Nanotubes conduct electrically better than copper, which makes them a contender for replacing the delicate wires that connect components together insi de computer chips. But only that, these can carry heat far more efficiently than diamond one of the best heat conductors around. So if the processor chips are made from nanotubes, there would be little risk of burning up. No matter how hard a nanotube is s queezed, it will bend and buckle without breaking, pringing back into shape as soon as the external force is removed.
DESIGN and DESCRIPTION:
The design is quite simple. Nan tubes can serve as individually addressable lectromechanical switches arrayed across the surface of a microchip, storing hundreds of igabits of information may be even a terabit. An electric field applied to a nanotube ould ause it to flex downward into depression etched onto the chip’s surface, where it would ontact rather another nanotube or touch a metallic electrode. Once bent, the nanotubes an emain that way, including when the power is turned off, allowing for non volatile peration. Vanderwaals forces, which are weak molecular forces of attractions, ould hold he switch in place until application of fields f different polarity causes the anotube to eturn to its straightened position. ig: simple construction of NRAM showing ts arious omponents. s shown in fig sagging and straightening represent ’1’ and ‘0’ tates,\ pectively, for a random access memory. In its ‘0’state, the nanotube fabric emains spended above the electrode. When the transistor below the electrode is turned on, the ectrode is turned on, the electrode produces an electric field that causes the nanotube bric o bend and touch the electrode - a configuration that denotes ‘1’ state. This is the rinciple a switching device. nanotube memory is faster much smaller while consuming ittle power. Due to heir extraordinary tensile strength, resilience and very high onductivity, nanotubes can e flexed up and down million times without any damage and an make a very good witchingcontact.
As shown in fig sagging and straightening represent ’1’ and ‘0’ states espectively, for a andom access memory. In its ‘0’state, the nanotube fabric remains uspended above the lectrode. When the transistor below the electrode is turned on, the lectrode is turned on, he electrode produces an electric field that causes the nanotube abric to bend and touch he electrode - a configuration that denotes ‘1’ state. This is the rinciple of a switching evice. nanotube memory is faster much smaller while consuming little power. Due to heir extraordinary tensile strength, resilience and very high conductivity, nanotubes can e lexed up and down million times without any damage and can make a very good witchingcontact. ig: suspended nanotube switched connection anotubes purchased from ulk suppliers are a form of high -tech carbon soot that
NANOTECHNOLOGY IN MEMORY DEVICES
ABSTRACT:
Nanotechnology deals with the study of nano sized particles. With the study of nano size particles, devices and composites, we will find ways to make stronger materials, detect diseases in the bloodstream, build extremely tiny machines, generate light and energy and purify water. The most fascinating application of Nanotechnology is that to make Nano\ sized switches to store information. The memory needs of the contemporary world have increased dramatically. Fulfilling these needs, a constant work to improve the capacities of today’s memory devices is in progress. The maximum available semiconductor RAM in common use is of 1GB. Even this could not fill the growing memory desire of today’s users. As a result a nonvolatile, fast and vast RAM has been built with the combination of semiconductor and nanotechnology, named as NRAM (Nano RAM). The main objective of this paper is to show how NANOTECHNOLOGY comfortably mingles with the existing semiconductor technology to from a sup erior RAM, which is nonvolatile, vast and economical, both, in price and power consumption . An effort, to explain why and how the Nano—RAM’s are superior to the existing forms of RAM devices, is made in the introductory part. This paper also includes the design and description of the Nano RAM, followed by its advantages and disadvantages. As the CARBON NANOTUBE forms the heart of these devices , a short notes is also added to introduce the CARBON NANOTUBE’s. Efforts are also made to include a small comparison between the Nano RAM and other possible RAM technologies which claim themselves “Universal” as that of Nano—RAM.
INTRODUCTION:
Today the world is of digital. All the electronic devices are formalized to manipulate the digital data. The back -bone of today’s research and development “The Computer” is also a digital device. Digital by name deals with digits and all the gadgets available today (like PDA’s, laptops, etc…) need to manipulate the digital data. To manipulate first we have to store it at a place. Thus MEMORY in t oday’s world plays a key role and a constant research to improve the memory in today ’s electronic gadgets is ON. RAM (random access memory) is the main storage device in all digital systems. The speed of the system mainly depends on how speed and vast the RAM is. Today with increasing power need of man even the POWER consumed is also a major part to look at. By generations RAM also had under gone many changes. Some of the versions of RAM’s which are in use are DRAM, SRAM and FLASH MEMORY. DRAM (dynamic RAM) although has a capability to hold large amounts of data it is slower and volatile. SRAM (static RAM) even superior to DRAM in speed but less denser . Even this is volatile in nature. Over coming the volatile nature of these two FLASH MEMORY is the latest of today random access memories. Even this fails in power saving. Overcoming all these failures of above mentioned RAM’s , researchers developed a new RAM which unlike the semiconductor technology alone used by the former, uses a combination of NANOTECHNOLOGY and contemporary SEMICONDUCTOR TECHNOLOGY and is given the name NRAM.
THE INCREDIBLE SHRINKING NANOTUBE MEMORY:
Nano-RAM, is a proprietary computer memory technology from the company Nantero. It is a type of nonvolatile random access memory bas ed on the mechanical position of carbon nanotubes deposited on a chip -like substrate. In theory the small size of the nanotubes allows for very high density memories. Na ntero also refers to it as NRAM in short, but this acronym is also commonly used as a s ynonym for the morecommon NVRAM (nonvolatile random access memory), which refers to all nonvolatile RAM
memories. The active element used in this is a CARBON NANOTUBE.
CARBON NANOTUBE:
Carbon nanotubes are cylinders, measuring a nanometer or so in diamet er, that display a surface of hexagonal carbon rings that give the material the appearance of a honeycomb or chicken wire. The chemical bonds between carbon atoms in nanotubes are stronger than in diamond. Carbon nanotubes are 50 times stronger than steel, yet five times less dense. These are highly elastic and resilient to heat, and have large surface area. Nanotubes conduct electrically better than copper, which makes them a contender for replacing the delicate wires that connect components together insi de computer chips. But only that, these can carry heat far more efficiently than diamond one of the best heat conductors around. So if the processor chips are made from nanotubes, there would be little risk of burning up. No matter how hard a nanotube is s queezed, it will bend and buckle without breaking, pringing back into shape as soon as the external force is removed.
DESIGN and DESCRIPTION:
The design is quite simple. Nan tubes can serve as individually addressable lectromechanical switches arrayed across the surface of a microchip, storing hundreds of igabits of information may be even a terabit. An electric field applied to a nanotube ould ause it to flex downward into depression etched onto the chip’s surface, where it would ontact rather another nanotube or touch a metallic electrode. Once bent, the nanotubes an emain that way, including when the power is turned off, allowing for non volatile peration. Vanderwaals forces, which are weak molecular forces of attractions, ould hold he switch in place until application of fields f different polarity causes the anotube to eturn to its straightened position. ig: simple construction of NRAM showing ts arious omponents. s shown in fig sagging and straightening represent ’1’ and ‘0’ tates,\ pectively, for a random access memory. In its ‘0’state, the nanotube fabric emains spended above the electrode. When the transistor below the electrode is turned on, the ectrode is turned on, the electrode produces an electric field that causes the nanotube bric o bend and touch the electrode - a configuration that denotes ‘1’ state. This is the rinciple a switching device. nanotube memory is faster much smaller while consuming ittle power. Due to heir extraordinary tensile strength, resilience and very high onductivity, nanotubes can e flexed up and down million times without any damage and an make a very good witchingcontact.
As shown in fig sagging and straightening represent ’1’ and ‘0’ states espectively, for a andom access memory. In its ‘0’state, the nanotube fabric remains uspended above the lectrode. When the transistor below the electrode is turned on, the lectrode is turned on, he electrode produces an electric field that causes the nanotube abric to bend and touch he electrode - a configuration that denotes ‘1’ state. This is the rinciple of a switching evice. nanotube memory is faster much smaller while consuming little power. Due to heir extraordinary tensile strength, resilience and very high conductivity, nanotubes can e lexed up and down million times without any damage and can make a very good witchingcontact. ig: suspended nanotube switched connection anotubes purchased from ulk suppliers are a form of high -tech carbon soot that
