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The Gunn Diode

project report helper Offline

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01-11-2010, 04:34 PM

[attachment=7135]

Gunn Diodes

Gunn diodes are used as transferred electron oscillators (TEO) by using the negative resistance property of bulk Gallium Arsenide. The figure below shows the electron velocity in GaAs as a function of the applied electric field. Greater than about an electric field of 3.2 KV/cm, the electrons in N type GaAs move from a high-mobility, lowenergy valley to another valley where the mobility is lower. Consequently, the net electron velocity is lower. This negative resistance is used for generation of microwave power.

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The Gunn Diode - by seminar surveyer - 05-10-2010, 12:24 PM

RE: The Gunn Diode - by project report helper - 01-11-2010, 04:34 PM

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