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This article is presented by:
TAMAL DAS
ECE 4th
Outline
Recent issues with scaling
Proposed solutions
Proposed Architectures
Recent issues with power crisis
FinFET Fabrication
FinFET Modeling
Conclusion
What is expected ?
Complexity
Delay
Power
Cost
Design Time
Size
Device Scaling
Channel Width Channel Length
To insure that optimal W/L ratios are available
Drain-to-Source Voltage Channel Length
To maintain a constant electric field from source to drain
Gate-Oxide Thickness Channel Length
To maintain control of the energy barrier in the channel through increasing the capacitive coupling from the gate
Channel Doping Density 1/(Channel Length)
Maintain a reasonable number of dopants in the decreasing channel area
This article is presented by:
TAMAL DAS
ECE 4th
FIN-FET
Outline
Recent issues with scaling
Proposed solutions
Proposed Architectures
Recent issues with power crisis
FinFET Fabrication
FinFET Modeling
Conclusion
What is expected ?
Complexity
Delay
Power
Cost
Design Time
Size
Device Scaling
Channel Width Channel Length
To insure that optimal W/L ratios are available
Drain-to-Source Voltage Channel Length
To maintain a constant electric field from source to drain
Gate-Oxide Thickness Channel Length
To maintain control of the energy barrier in the channel through increasing the capacitive coupling from the gate
Channel Doping Density 1/(Channel Length)
Maintain a reasonable number of dopants in the decreasing channel area
