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FinFET technology
Multigate device or multigate device: multiple gate field-effect transistor (MuGFET) refers to the MOS transistor, which includes more than one valve in a single device.

FinFETs
This term refers to the neploskim, a double-Gate Transistor built on SOI substrate. based on the earlier DELTA (one goal) transistor design.This term was coined at the University of California, Berkeley, researchers. In conducting channel FinFETs wrapped around a thin silicon "fin" that forms the body of the appliance in the direction of effective channel length of the device is determined by the size of the fin. AMD, IBM, and Motorola describe their development efforts with dual gate FinFET as. any fin-based, multigate transistor architecture describes in general the term FinFET regardless of the number of gates.Taiwan Semiconductor Manufacturing Company has developed a 25-nm transistor operating on only 0.7 volts. He has a shutter lag of only 0.39 picoseconds.
http://eetimesstory/OEG20021210S0002

FinFET technology

Most are treated as FinFETs
likely candidate for successor bulk CMOS from
22 nm node of the year, due to its compatibility with the
Current CMOS technology. digital logic, SRAM, DRAM, Flash memory with all the FinFET. They have high podporogovuû
performance and superior saturation current and find application in high-gain analog and RF applications.

DEVICE MANUFACTURER:
-processing of High FIN-structures:
very high
etching anisotropy is required to keep the fins are narrow in the etching of high FIN-structures for highly-scalable applications.

-MOS Device on high edges:
They are built on high and FinFETs narrow fin
structure.
standard gate-stack with thermally grown silicon dioxide gate dielectric and LPCVD as polysilicon as the gate
Material.