i need to find solutions manual of the book of "semiconductor device physics and design"

Writers are Umesh K. Mishra
and Jasprit Singh

plz.

Thanks


yhrg916[at]gmail.com

need to find solutions manual of the book of "semiconductor device physics and design"

Writers are Umesh K. Mishra
and Jasprit Singh

Plz
Thanks, Nayana
space.kichu[at]gmail.com

1. Find the built-in potential for a p-n Si junction at room temperature if the bulk
resistivity of Si is 1 Ω cm. Electron mobility in Si at RT is 1400 cm2 V−1
s
−1
; µn/µp = 3.1;
ni = 1.05 × 1010 cm−3
.
2. For the p-n Si junction from the previous problem calculate the width of the space
charge region for the applied voltages V = −10, 0, and +0.3 V. ǫSi = 11.9
3. For the parameters given in the previous problem find the maximum electric field
within the space charge region. Compare these values with the electric field within a
shallow donor: E ≈ e/ǫSia
2
B
, where aB is the Bohr radius of a shallow donor, aB =
ǫSi~
2/m∗
e
e
2 and m∗
e
/m0 = 0.33.
4. Calculate the capacity of the p-n junction from the problem 2 if the area of the
junction is 0.1 cm2
.