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INTRODUCTION
Nano materials
-Nanoscale computer architecture

Self assembly by DNA hybridization
-Assemble more complex 3-D structure
RG-FET
Is novel--nature of its fabrication & placement within self-assembling device structure
Can be incorporated into a DNA-guided self assembly process
By chemically attaching different DNA strands to each end of rod
--Nano-porous alumina synthesis of silicon nano rods
N-type RG-FET
N-type RG-FET…
Similar in structure to surrounding gate transistors
Rod length 500nm
Rod diameter 50nm

RG-FET INVERTER
RG-FET inverter…
Junctions--metalized DNA strands that have low ohmic resistance
Can support around 10ˆ19components--seem unusable but when coupled with parallel search technique can open up large problem spaces
PISCES IIB Simulation Results
RG-FET Doping Profile by PISCES IIB
RG-FET Doping Profile…

Substrate-10^15 p-type atoms/cu.cm

Drain&Source-10^21 n-type atoms/cu.cm
Simulation…
Time independent simulation
Vds bias across top-bottom & Vgs between oxide side-bottom
operating temperature of 300k
swept Vds & Vgs from 0-1v
IV curve & transconductance curve plotted
IV & Transconductance Curves
IV curves
Transconductance curves
Simulation of RG-FET logic devices
Simulation Result Table
Simulation…
Estimate power consumption ,
Gate delay
Power delay products(PT)
Result…
Reduction of approx. 4 orders of magnitude in power-delay product--as a result of small substrate to body capacitance of RG-FET