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resistive ram seminar report pdf

Resistive random-access memory (RRAM or ReRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material often referred to as a memristor. This technology bears some similarities to CBRAM and phase-change memory (PCM).

CBRAM involves one electrode providing ions that dissolve readily in an electrolyte material, while PCM involves generating sufficient Joule heating to effect amorphous-to-crystalline or crystalline-to-amorphous phase changes. On the other hand, RRAM involves generating defects in a thin oxide layer, known as oxygen vacancies (oxide bond locations where the oxygen has been removed), which can subsequently charge and drift under an electric field. The motion of oxygen ions and vacancies in the oxide would be analogous to the motion of electrons and holes in a semiconductor.

RRAM is currently under development by a number of companies, some of which have filed patent applications claiming various implementations of this technology.[1][2][3][4][5][6][7] RRAM has entered commercialization on an initially limited KB-capacity scale.[8]

Although commonly anticipated as a replacement technology for flash memory, the cost benefit and performance benefit of RRAM have not been obvious enough to most companies to proceed with the replacement. A broad range of materials apparently can potentially be used for RRAM. However, the recent discovery[9] that the popular high-κ gate dielectric HfO2 can be used as a low-voltage RRAM has greatly encouraged others to investigate other possibilities. Even more recently SiOx has been identified to offer significant benefits. Weebit-Nano Ltd is one company that is pursuing SiOx and has already demonstrated functional devices.