02-04-2010, 03:25 PM
Abstract-
In this paper, a new complementary gate driver for power metal-oxide semiconductor field-effect transistors and in sulated gate bipolar transistors is presented based on the use of a piezoelectric transformer (PT). This type of transformer has a high integration capability. Its design is based on a multilayer struc ture working in the second thickness resonance mode. A new de sign method has been used based on an analytical Mason model in order to optimize the efficiency, the available power at the trans former secondary ends, and the total volume. This design method takes into account mechanical losses and heating of the piezoelec tric material; it can be extended to predict the characteristics of the PT: gain, transmitted power, efficiency, and heating of piezo electric materials according to load resistance.
Index Terms-Insulated gate bipolar transistors (IGBTs), metal-oxide semiconductor field-effect transistors (MOSFETs), piezoelectric transformer (PT).
