pn junction diode topic pdf download
#1

N and P type semicondecter materials are first joined to gather
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#2
P-N junction diode is the most fundamental and the simplest electronics device. When one side of an intrinsic semiconductor is doped with acceptor i.e, one side is made p-type by doping with n-type material, a p-n junction diode is formed. This is a two terminal device.
The effect described in the previous tutorial is achieved without any external voltage being applied to the actual PN junction resulting in the junction being in a state of equilibrium. However, if we were to make electrical connections at the ends of both the N-type and the P-type materials and then connect them to a battery source, an additional energy source now exists to overcome the potential barrier.The effect of adding this additional energy source results in the free electrons being able to cross the depletion region from one side to the other. The behaviour of the PN junction with regards to the potential barrier’s width produces an asymmetrical conducting two terminal device, better known as the PN Junction Diode.

A PN Junction Diode is one of the simplest semiconductor devices around, and which has the characteristic of passing current in only one direction only. However, unlike a resistor, a diode does not behave linearly with respect to the applied voltage as the diode has an exponential current-voltage ( I-V ) relationship and therefore we can not described its operation by simply using an equation such as Ohm’s law.

If a suitable positive voltage (forward bias) is applied between the two ends of the PN junction, it can supply free electrons and holes with the extra energy they require to cross the junction as the width of the depletion layer around the PN junction is decreased.

By applying a negative voltage (reverse bias) results in the free charges being pulled away from the junction resulting in the depletion layer width being increased. This has the effect of increasing or decreasing the effective resistance of the junction itself allowing or blocking current flow through the diode.

Then the depletion layer widens with an increase in the application of a reverse voltage and narrows with an increase in the application of a forward voltage. This is due to the differences in the electrical properties on the two sides of the PN junction resulting in physical changes taking place. One of the results produces rectification as seen in the PN junction diodes static I-V (current-voltage) characteristics.
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#3

The semiconductor diode is widely used within the electronics and semiconductor industry.

It is used in its own right, and as a PN junction it is a critical element in transistors and many other semiconductor devices.

However as a discrete component it is also a key part of many electronic circuits, being used in its own right.

Diodes can be manufactured for a whole variety of applications from very low power signal applications right up to power rectification and the like. The technologies use may also differ and as a result there are many different types of diodes, both in ratings and the functions for which they are intended.

In most cases the basic format for the diode is much the same. The diode contains a PN junction which provides the basic functionality for the device.

P-N junction diode is the most fundamental and the simplest electronics device. When one side of an intrinsic semiconductor is doped with acceptor i.e, one side is made p-type by doping with n-type material, a p-n junction diode is formed. This is a two terminal device. It appeared in 1950’s. P-N junction can be step graded or linearly graded. In step graded the concentration of dopants both, in n - side and in p - side are constant up to the junction. But in linearly graded junction, the doping concentration varies almost linearly with the distance from the junction. When the P-N diode is in unbiased condition that is no voltage is applied across it, electrons will defuse through the junction to p-side and holes will defuse through the junction to n-side and they combine with each other. Thus the acceptor atom near the p-side and donor atom near n-side are left unutilized. An electron field is generated by these uncovered charges. This opposes further diffusion of carriers. So, no movement of region is known as space charge or depletion region.
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