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Abstract

One of the "fundamental" problems in the continued scaling of MOSFETs is the 60 mV/decade room temperature limit in subthreshold slope. In this paper, we report initial studies on a new kind of transistor, the I-MOS. The I-MOS uses modulation of the breakdown voltage of a gated p-i-n structure in order to switch from the OFF to the ON state and vice versa. Since impact-ionization is an abrupt function of the electric field (or the carrier energy), simulations show that the device has a subthreshold slope much lower than kT/q. Simulations also show that it is indeed possible to make complementary circuits with switching speeds comparable to or exceeding CMOS. Experimental results on a silicon based prototype verify the basic concept and show very steep subthreshold slopes with high speed turn-on and turn-off. Lower bandgap materials are also being investigated to reduce the value of the breakdown voltage and permit lower voltage operation.

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This paper appears in: Electron Devices Meeting, 2002. IEDM '02. Digest. International
Issue Date: 2002
On page(s): 289 - 292
ISSN:
Print ISBN: 0-7803-7462-2
INSPEC Accession Number: 7509297
Digital Object Identifier: 10.1109/IEDM.2002.1175835
Date of Current Version: 06 February 2003