gunn diode characteristics viva questions
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The diodes are classified into different types based on their working principles and characteristics. These include Generic diode, Schotty diode, Shockley diode, Constant-current diode, Zener diode, Light emitting diode, Photodiode, Tunnel diode, Varactor, Vacuum tube, Laser diode, PIN diode, Peltier diode, Gunn diode, and so on. On a special case, this article discuss about Gunn diode’s working, characteristics and applications.

What is a Gunn Diode?

A Gunn Diode is considered as a type of diode even though it does not contain any typical PN diode junction like the other diodes, but it consists of two electrodes. This diode is also called as a Transferred Electronic Device. This diode is a negative differential resistance device, which is frequently used as a low-power oscillator to generate microwaves. It consists of only N-type semiconductor in which electrons are the majority charge carriers. To generate short radio waves such as microwaves, it utilizes the Gunn Effect.

Gunn Diode Structure
Gunn Diode Structure
The central region shown in the figure is an active region, which is properly doped N-type GaAs and epitaxial layer with a thickness of around 8 to 10 micrometers. The active region is sandwiched between the two regions having the Ohmic contacts. A heat sink is provided to avoid overheating and premature failure of the diode and to maintain thermal limits.

For the construction of these diodes, only N-type material is used, which is due to the transferred electron effect applicable only to N-type materials and is not applicable to the P-type materials. The frequency can be varied by varying the thickness of the active layer while doping.

Gunn Effect

It was invented by John Battiscombe Gunn in 1960s; after his experiments on GaAs (Gallium Arsenide), he observed a noise in his experiments’ results and owed this to the generation of electrical oscillations at microwave frequencies by a steady electric field with a magnitude greater than the threshold value. It was named as Gunn Effect after this had been discovered by John Battiscombe Gunn.

The Gunn Effect can be defined as generation of microwave power (power with microwave frequencies of around a few GHz) whenever the voltage applied to a semiconductor device exceeds the critical voltage value or threshold voltage value.
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