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Extreme ultraviolet lithography

Extreme ultraviolet lithography (also known as EUV or EUVL) is a next-generation lithography technology using an extreme ultraviolet (EUV) wavelength, currently expected to be 13.5 nm. EUV is currently being developed for possible future high volume use in 2020 for Intel's, Globalfoundries' and Samsung's 7 nm node, TSMC's 5 nm node, and SMIC's 14 nm node. The primary EUV tool maker, ASML, projects EUV at 5 nm node to require a higher numerical aperture than currently available and multiple patterning to a greater degree than immersion lithography at 20 nm node.[6] Immersion lithography is still more than 4 times faster than EUV (275 WPH vs. 65 WPH as detailed below), due to source power limitations; hence, multiple patterning with immersion lithography has already been used where EUV had previously been expected to be used. However, it is currently recognized that EUV cannot practically realize 40-50 nm pitch, due to stochastic effects in resist exposure, so even 10 nm node is currently off limits.
While source power is the chief concern due to its impact on productivity, significant changes in EUV mask infrastructure, including blanks, pellicles and inspection, are also under study. Particle contamination would be prohibitive if pellicles were not stable above 200 W, i.e., the targeted power for manufacturing. Without pellicles, particle adders would reduce yield, which has not been an issue for conventional optical lithography with 193 nm light and pellicles. The current lack of any suitable pellicle material, aggravated by the use of hydrogen plasma cleaning in the EUV scanner, is preventing the adoption of EUV lithography for volume production.
Secondary electron effects (covered below) degrade resolution at the targeted insertion nodes.
Some issues not specific to EUV, such as resist collapse and stochastic effects (including photon shot noise), also currently bar EUV from exceeding the resolution limits of immersion lithography in high volume manufacturing.
Double patterning is expected for EUV for random logic patterns at the 7 nm node (32 nm pitch), due to the need for dipole illumination. The 5 nm node (22 nm pitch) would likewise be expected to use multiple patterning already being developed for immersion lithography.

Extreme ultraviolet lithography (EUVL) is an advanced technology for making microprocessors a hundred times more powerful than those made today. Intel, AMD , and Motorola have joined with the U.S. Department of Energy in a three-year venture to develop a microchip with etched circuit lines smaller than 0.1 micron in width. (Today's circuits are generally .18 micron or greater.) A microprocessor made with the EUVL technology would be a hundred times more powerful than today's. Memory chips would be able to store 1,000 times more information than they can today. The aim is to have a commercial manfacturing process ready before 2005.

EUVL is one technology vying to replace the optical lithogaphy used to make today's microcircuits. It works by burning intense beams of ultraviolet light that are reflected from a circuit design pattern into a silicon wafer. EUVL is similar to optical lithography in which light is refracted through camera lenses onto the wafer. However, extreme ultraviolet light, operating at a different wavelength , has different properties and must be reflected from mirrors rather than refracted through lenses. The challenge is to build mirrors perfect enough to reflect the light with sufficient precision. Intel is working on some early prototypes. In the meantime, optical lithography will continue to advance over the next few years until replaced by newer technologies such as EUVL.