05-02-2010, 06:50 PM
plzz post the details soon
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e clothing
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05-02-2010, 09:02 PM
The e-cloth is a type of cloth woven with conductive fibers and can be designed to
support a variety of electronic components such as tiny
circuits, sensors, and wireless communication devices,and like other kinds of
fabrics, the electronic cloth can be possible to sewn many shapes, such as a bag or a
tag..etc,Once fashioned into the appropriate device the cloth can be programmed to
respond differently to a variety of situation,like If it were a bag used to secure a
laptop computer made of e-cloth ,and the owner page link it via wireless technology to an
already existing alarm system, which can sound off if the bag is moved or tampered,
used to embed sensing, actuation and displays into clothing and surface coverings.
and also can be used to embed sensing, actuation and displays into clothing and
surface coverings.
e-cloth built by plastic pentacene transistors directly on cloth fibers In a process that is compatible with textile manufacturing, the transistors were
fabricated using a 125 µm diameter aluminum wire as the gate line. In practice, this
wire may be directly woven into an e-textile to serve as a gate interconnect.
Interestingly, the transistors were fabricated without conventional lithography.
Instead, accomplishing natural pattern of textiles patterning via shadowing from
over-woven fibers. The fiber was masked with orthogonal over-woven 50 µm diameter
wires (Figure ). These served as channel masks; a transistor was formed at every
intersection. 100 nm gold was evaporated to form source/drain contacts.and
transistors were patterned via shadowing from over-woven fibers. The fiber was masked
with orthogonal over-woven 50 µm diameter wires.Upon removal of the over-woven
fibers, arrays of transistors resulted, with a transistor formed at every
intersection. All transistors were ~125/50 µm, since transistors were only formed on
the surface of the gate wire exposed during pentacene evaporation. The resulting
transistors are similar to conventional inverted top-contacted pentacene thin-film
transistors (TFTs). However, the entire transistor was formed on a metallic gate
wire, assuring easy e-textile integration. Electron mobilities were >0.01 cm2/V-sec
at 20 V.
support a variety of electronic components such as tiny
circuits, sensors, and wireless communication devices,and like other kinds of
fabrics, the electronic cloth can be possible to sewn many shapes, such as a bag or a
tag..etc,Once fashioned into the appropriate device the cloth can be programmed to
respond differently to a variety of situation,like If it were a bag used to secure a
laptop computer made of e-cloth ,and the owner page link it via wireless technology to an
already existing alarm system, which can sound off if the bag is moved or tampered,
used to embed sensing, actuation and displays into clothing and surface coverings.
and also can be used to embed sensing, actuation and displays into clothing and
surface coverings.
e-cloth built by plastic pentacene transistors directly on cloth fibers In a process that is compatible with textile manufacturing, the transistors were
fabricated using a 125 µm diameter aluminum wire as the gate line. In practice, this
wire may be directly woven into an e-textile to serve as a gate interconnect.
Interestingly, the transistors were fabricated without conventional lithography.
Instead, accomplishing natural pattern of textiles patterning via shadowing from
over-woven fibers. The fiber was masked with orthogonal over-woven 50 µm diameter
wires (Figure ). These served as channel masks; a transistor was formed at every
intersection. 100 nm gold was evaporated to form source/drain contacts.and
transistors were patterned via shadowing from over-woven fibers. The fiber was masked
with orthogonal over-woven 50 µm diameter wires.Upon removal of the over-woven
fibers, arrays of transistors resulted, with a transistor formed at every
intersection. All transistors were ~125/50 µm, since transistors were only formed on
the surface of the gate wire exposed during pentacene evaporation. The resulting
transistors are similar to conventional inverted top-contacted pentacene thin-film
transistors (TFTs). However, the entire transistor was formed on a metallic gate
wire, assuring easy e-textile integration. Electron mobilities were >0.01 cm2/V-sec
at 20 V.
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