15-02-2015, 06:56 AM
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22nm 3D tri gate pin fet seminars report
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10-03-2017, 09:58 AM
The pace dictated by Moore's Law has required numerous innovations and as a result, the "Sponsors of Tomorrow" introduced a three-dimensional technology of transistors, basically Tri-Gate transistors in their 22 nm logic technology.
Important turning point in transistor technology
In 1947, the first transistor was demonstrated at Bell Laboratories. Silicon was first used to produce bipolar transistors in 1954, but it was not until 1960 that the first silicon oxide semiconductor field effect transistor (MOSFET) was built. The older MOSFETs were 2D planar devices with current flowing along the silicon surface under the damper. The basic structure of MOSFET devices has remained virtually unchanged for more than 50 years.
The optimization and manufacturing studies on three-dimensional transistor structures were continued in research and development organizations of leading semiconductor companies. Part of the patent process and development has been publicly published and shared, and some have remained in corporate laboratories. The Semiconductor International Technology Roadmap (ITRS) promotes the research investment interests of the semiconductor industry, which is coordinated and published by a consortium of manufacturers, suppliers and research institutes.
The ITRS defines transistor technology requirements to achieve continuous improvement in performance, power and density along with options that must be explored to achieve the objectives. The ITRS and its public documentation captures conclusions and recommendations regarding manufacturing capabilities such as Forced Silicon and High-K Metal Door, and now use of three-dimensional transistor technologies to maintain the benefits of Moore's law. Based on documents produced by the ITRS and a review of academic papers and patent applications, 3D transistor technology research has grown dramatically over the last decade.
Triggers that highlighted three-dimensional transistors
Two major pronouncements that have occurred over the past two years that have driven the 3D transistor structure in the industry focus, and a permanent place in the history of MOSFET transistor technology are 1) The first announcement of Intel Corporation on May 4, 2011, about its Tri-Gate transistor design that had been selected for the design and manufacture of its 22 nm semiconductor products. 2) The second announcement was the publication of ITRS technology roadmaps, with contributions from many other semiconductor manufacturing companies that identified 3-D transistor technology as the main facilitator of all incremental semiconductor improvements beyond the node Of design of 20 nm or 22 nm.
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