17-01-2015, 08:02 PM
PLEASE SHOW DETAILS OF THE BLUE LED SEMINAR REPORT
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blue led seminars paper
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PLEASE SHOW DETAILS OF THE BLUE LED SEMINAR REPORT
08-03-2017, 11:40 AM
Blue LED
Blue LEDs were first developed by Herbert Paul Maruska in RCA in 1972 using Gallium Nitride (GaN) on a sapphire substrate. SiC types were marketed for the first time in the United States by Cree in 1989. However, none of these early blue LEDs were very bright. The first high-brightness blue LED was demonstrated by Shuji Nakamura of Nichia Corporation in 1994 and was based on InGaN. In parallel, Isamu Akasaki and Hiroshi Amano in Nagoya were working on the development of important GaN nucleation on sapphire substrates and the demonstration of p-type doping of GaN. Nakamura, Akasaki and Amano received the Nobel Prize in Physics 2014 for their work. In 1995, Alberto Barbieri of the Cardiff University Laboratory (GB) investigated the efficiency and reliability of high brightness LEDs and demonstrated a "clear contact" LED using indium oxide and tin oxide (AlGaInP / GaAs) . In 2001 and 2002, the processes for the development of gallium nitride (GaN) silicon LEDs were successfully demonstrated. In January 2012, Osram demonstrated that high power InGaN LEDs were commercially grown on silicon substrates.
Blue LEDs were first developed by Herbert Paul Maruska in RCA in 1972 using Gallium Nitride (GaN) on a sapphire substrate. SiC types were marketed for the first time in the United States by Cree in 1989. However, none of these early blue LEDs were very bright. The first high-brightness blue LED was demonstrated by Shuji Nakamura of Nichia Corporation in 1994 and was based on InGaN. In parallel, Isamu Akasaki and Hiroshi Amano in Nagoya were working on the development of important GaN nucleation on sapphire substrates and the demonstration of p-type doping of GaN. Nakamura, Akasaki and Amano received the Nobel Prize in Physics 2014 for their work. In 1995, Alberto Barbieri of the Cardiff University Laboratory (GB) investigated the efficiency and reliability of high brightness LEDs and demonstrated a "clear contact" LED using indium oxide and tin oxide (AlGaInP / GaAs) . In 2001 and 2002, the processes for the development of gallium nitride (GaN) silicon LEDs were successfully demonstrated. In January 2012, Osram demonstrated that high power InGaN LEDs were commercially grown on silicon substrates.
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