Resistive random-access memory (RRAM) is a new non-volatile memory type . Basic idea is that a dielectric, which is normally insulating can be made to conduct through a filament or conduction path formed after application of a sufficiently high voltage. The conduction path formation can arise from different mechanisms, including defects, metal migration, etc. Once the filament is formed, it may be reset (broken, resulting in high resistance) or set (re-formed, resulting in lower resistance) by an appropriately applied voltage. Different forms of RRAM have been disclosed based on different dielectric materials, spanning from perovskites to transition metal oxides to chalcogenides. Even silicon dioxide has been shown to exhibit resistive switching
i want to the seminar reports on RRAM. plz sir give me this topic
Please give me seminar report on topic the resistive rndom access memory.
Resistive random access memory (RRAM or ReRAM) is a type of non-volatile random access (RAM) computer memory that works by changing the resistance through a dielectric solid-state material often referred to as a memristor. This technology has some similarities with conductive bridge RAM (CBRAM) and phase change memory (PCM). CBRAM involves an electrode which provides ions that readily dissolve in an electrolytic material, while PCM involves generating sufficient Joule heating to effect amorphous to crystalline or crystalline to amorphous phase changes. On the other hand, RRAM implies generating defects in a thin oxide layer, known as oxygen gaps (oxygen-binding sites where oxides have been removed), which can then be charged and diverted under an electric field. The movement of oxygen ions and vacancies in the oxide would be analogous to the movement of electrons and holes in a semiconductor.
RRAM is currently under development by several companies, some of which have filed patent applications claiming various implementations of this technology. RRAM has started marketing on an initially limited KB scale. Although anticipated as a flash memory replacement technology, the cost benefit and benefit of RRAM has not been sufficient for companies to proceed with replacement. It appears that a wide range of materials can be used for RRAM. However, the recent discovery that the popular dielectric high-gate κ HfO2 can be used as a low-voltage RRAM has encouraged others to investigate other possibilities. Even more recently, SiOx has been identified to offer significant benefits. Weebit-Nano Ltd is a company that is following SiOx and has already demonstrated functional devices.
In February 2012 Rambus purchased a RRAM company called Unity Semiconductor for $ 35 million. Panasonic released a RRAM evaluation kit in May 2012, based on a 1T1R memory cell architecture (1 transistor - 1 resistor) of tantalum oxide. In 2013, Crossbar introduced a RRAM prototype as a postage stamp-sized chip that could store 1TB of data. In August 2013, the company stated that large-scale production of its RRAM chips was scheduled for 2015. The memory structure (Ag / a-Si / Si) closely resembles a silver CBRAM.
Different forms of RRAM, based on different dielectric materials, ranging from perovskites to transition metal oxides to chalcogenides have been described. It was shown that silicon dioxide exhibited resistive switching since 1967, and has recently been revised. Leon Chua argued that all non-volatile two-terminal memory devices including RRAMs should be considered memristors. Stan Lab of HP Labs also argued that RRAM was a memristor. However, others challenged this terminology and the applicability of memristor theory to any physically feasible device is open to question. We discuss whether the redox based resistive switching elements (RRAM) are covered by the current memristor theory.
In 2014, the researchers announced a device that used a silicon oxide porous dielectric with no edge structure. In 2010, filament conductive pathways were discovered, leading to further advancement. It can be manufactured at room temperature and has a sub-2V voltage, higher on / off ratio, lower power consumption, nine bits per cell capacity, higher switching speeds and greater resistance.