02-01-2011, 03:10 AM
Technology,Design,andImplementationofHigh-KMI MCapacitorsforHighdi/dt applications in clocking,I/O and microprocessor
The continued scaling of transistors has resulted in the never before expected levels of integration of the circuits. The SoCs that result are applied in a wide range of applications. This may sometimes mean the multiple integrated cores as well as the multiple integrated IO protocols all working simultaneously on a same silicon die.
As the on-die capabilities have changed, the traditional methods of design are no longer providing a well defined and predictable outcome. There is an incresed need for the increased level of internal decoupling capacitor. An integrated Metal-Insulation-Metal capacitor(MIM) is described in the article and is shown as vital to achieving the necessary IO performance as well as the die size. A high capacitance per unit area MIM capacitors can provide an attractive alternative for the both static power and the area perspective. Thiscker oxide devices with worse capacitance per unit area are required.
Get the full report here:
http://scribddoc/12923372/Technology-Design-and-Implementation-of-HighK-MIM-Capacitors-for-High-didt-Applications-Microprocessor-10-and-Clocking
The continued scaling of transistors has resulted in the never before expected levels of integration of the circuits. The SoCs that result are applied in a wide range of applications. This may sometimes mean the multiple integrated cores as well as the multiple integrated IO protocols all working simultaneously on a same silicon die.
As the on-die capabilities have changed, the traditional methods of design are no longer providing a well defined and predictable outcome. There is an incresed need for the increased level of internal decoupling capacitor. An integrated Metal-Insulation-Metal capacitor(MIM) is described in the article and is shown as vital to achieving the necessary IO performance as well as the die size. A high capacitance per unit area MIM capacitors can provide an attractive alternative for the both static power and the area perspective. Thiscker oxide devices with worse capacitance per unit area are required.
Get the full report here:
http://scribddoc/12923372/Technology-Design-and-Implementation-of-HighK-MIM-Capacitors-for-High-didt-Applications-Microprocessor-10-and-Clocking